Title of article
Carrier dynamics in GaN at extremely low excited carrier densities
Author/Authors
Mickevicius، نويسنده , , J. and Tamulaitis، نويسنده , , G. and Vitta، نويسنده , , P. and Zukauskas، نويسنده , , A. and Shur، نويسنده , , M.S. and Zhang، نويسنده , , J. and Yang، نويسنده , , J. M. Gaska، نويسنده , , R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
312
To page
315
Abstract
Carrier dynamics in GaN was studied using fluorescence lifetime measurement in the frequency domain technique in the temperature range from 8 to 300 K at very low and very high excitation levels. The study was performed in a high-quality GaN epilayer exhibiting a room-temperature nonequilibrium carrier lifetime of 2 ns, which was determined by a light-induced transient grating (four-wave mixing) technique. The results reveal the roles of donor–acceptor pair recombination and conduction band–acceptor recombination in yellow luminescence band formation.
Keywords
A. Semiconductors , E. Frequency domain lifetime measurements , E. Light-induced transient grating technique
Journal title
Solid State Communications
Serial Year
2008
Journal title
Solid State Communications
Record number
1764134
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