Title of article
Predicting the ionization threshold for carriers in excited semiconductors
Author/Authors
Snoke، نويسنده , , David، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
5
From page
73
To page
77
Abstract
A simple set of formulas are presented which allow prediction of the fraction of ionized carriers in an electron–hole–exciton gas in a photoexcited semiconductor. These results are related to recent experiments with excitons in single and double quantum wells.
Keywords
A. Semiconductors , D. Mott transition , D. Plasma , D. Exciton
Journal title
Solid State Communications
Serial Year
2008
Journal title
Solid State Communications
Record number
1764210
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