Title of article
Quantum transport in an ultra-thin SOI MOSFET: Influence of the channel thickness on the I–V characteristics
Author/Authors
Croitoru، نويسنده , , M.D. and Gladilin، نويسنده , , V.N and Fomin، نويسنده , , V.M and Devreese، نويسنده , , J.T. and Magnus، نويسنده , , W. and Schoenmaker، نويسنده , , W. and Sorée، نويسنده , , B.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
5
From page
31
To page
35
Abstract
Quantum mechanical features of the electron transport in a SOI MOSFET are described within the Wigner function formalism which explicitly deals with electron scattering due to ionized impurities, acoustic phonons and surface roughness at the Si/SiO2 interface. The calculated device characteristics are obtained as a function of the thickness of the semiconductor layer. An analysis of the I–V characteristics of the MOSFET shows a substantial reduction of the short-channel effect with a decrease in the channel thickness of the device.
Keywords
D. Electronic transport , A. Nanostructures
Journal title
Solid State Communications
Serial Year
2008
Journal title
Solid State Communications
Record number
1764303
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