• Title of article

    Analytic expression for electronic density of states in random media with weak scattering potential

  • Author/Authors

    Pinsook، نويسنده , , Udomsilp and Sa-yakanit، نويسنده , , Virulh، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2008
  • Pages
    4
  • From page
    42
  • To page
    45
  • Abstract
    We evaluate the electronic density of states (DOS) in random media by using the expression from the variational path integral theory. The scattering potential is modeled by a Gaussian function. By imposing the limit of weak scattering, the full spectrum DOS can be approximated by an analytical method. The solution has several features; in the extended states, it is essentially proportional to E . In the localized states, it resembles an exponential tail. However, this tail has less population than that of the compatible Kane DOS. The total energy of the system is lowered by E α , depending linearly on the density of scatterers. Our results give good description to the photoluminescence spectra of Si:P and the tunneling measurement of GaAs.
  • Keywords
    A. Semiconductors , C. Impurities in semiconductors , D. Electronic band structure
  • Journal title
    Solid State Communications
  • Serial Year
    2008
  • Journal title
    Solid State Communications
  • Record number

    1764470