Title of article
Relaxation phenomena at the metal-to-insulator transition in La0.8Sr0.2MnO3 single crystals
Author/Authors
Dominiczak، نويسنده , , Maguy and Ruyter، نويسنده , , Antoine and Limelette، نويسنده , , Patrice and Monot-Laffez، نويسنده , , Isabelle and Giovannelli، نويسنده , , Fabien and Rossell، نويسنده , , Marta D. and Van Tendeloo، نويسنده , , Gustaaf، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
5
From page
340
To page
344
Abstract
The time dependence of the resistance R A C of a La0.8Sr0.2MnO3 single crystal has been investigated in the vicinity of the metal-to-insulator transition temperature. We used local probe microscopy to show the existence, at room temperature, of coexisting clusters of micrometer size. Our analysis shows that relaxation effects can be described with a simple exponential contribution using a random resistor-network, based on phase separation between insulating and metallic domains. Our results clearly prove the existence of a percolation threshold over which no percolation path exists. Moreover, these results highlight the significant role of the remanent magnetization.
Keywords
A. Lanthanum manganites , D. Metal–insulator transition , D. Phase separation , D. Relaxation phenomena
Journal title
Solid State Communications
Serial Year
2008
Journal title
Solid State Communications
Record number
1764602
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