Title of article
First-principles study of diffusion of zinc vacancies and interstitials in ZnO
Author/Authors
Huang، نويسنده , , Guiyang and Wang، نويسنده , , Chong-Yu and Wang، نويسنده , , Jian-Tao، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
6
From page
199
To page
204
Abstract
A comprehensive investigation of zinc vacancy and interstitial diffusion in ZnO has been performed using ab initio total energy calculations with both the local density approximation (LDA) and the generalized gradient approximation (GGA). Zinc interstitial is found to diffuse efficiently with a small barrier, 0.3–0.5 eV. Therein, the diffusion perpendicular to c axis tends to occur via an interstitial mechanism, and the diffusion parallel to c axis tends to occur via a kick-out mechanism. The diffusion of the zinc vacancy is found to be isotropic, and the migration barrier of the zinc vacancy is about 1.0 eV. Based on our results, zinc vacancies are responsible for the self-diffusion of zinc for n -type ZnO.
Keywords
A. Semiconductors , D. Thermodynamic properties , C. Point defects
Journal title
Solid State Communications
Serial Year
2009
Journal title
Solid State Communications
Record number
1764848
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