• Title of article

    Temperature-dependent photoluminescence of dimethylzinc-treated ZnSe/ZnS quantum dots

  • Author/Authors

    Kim، نويسنده , , Y.G. and Baek، نويسنده , , K.S. and Chang، نويسنده , , S.K.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2009
  • Pages
    4
  • From page
    937
  • To page
    940
  • Abstract
    Temperature-dependent photoluminescence (PL) measurements were carried out ZnSe/ZnS quantum dots (QDs) grown with post-growth interruption under a dimethylzinc (DMZn) flow. The PL spectra showed sigmoidal peak shifts and V-shaped full width at half maximum (FWHM) variations with increasing temperature, which strongly suggest that the QD structure of ZnSe/ZnS is quite similar to that of other material systems grown in the Stranski–Krastanov mode. Apparent differences are revealed as a consequence of DMZn treatment: (i) the PL spectra of ZnSe/ZnS QDs showed peaks at higher energies and persisted up to 300 K, and(ii) the minimum points of the V-shaped FWHM appear at a higher temperature compared to H2-purged ZnSe/ZnS QDs. Experimental results demonstrate the enhancement of localization energy.
  • Keywords
    D. Quantum localization , B. Nanofabrication , A. Nanostructures , E. Luminescence
  • Journal title
    Solid State Communications
  • Serial Year
    2009
  • Journal title
    Solid State Communications
  • Record number

    1765245