Title of article
On the low-temperature properties of
Author/Authors
Gondek، نويسنده , , ?ukasz and Kaczorowski، نويسنده , , Dariusz and Szytu?a، نويسنده , , Andrzej، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
4
From page
2181
To page
2184
Abstract
Magnetic, electrical transport and heat capacity measurements have been performed on polycrystalline sample of the compound TmRu2Si2, which crystallizes with the tetragonal ThCr2Si2-type crystal structure. The results show paramagnetic behaviour down to 0.3 K, at variance with the literature data. On the basis of the collected data, possible origins of non-magnetic behaviour are discussed. Mixed valence of Tm ions or hybridisation between Tm 4f and Ru 4d states are the most probable reasons for paramagnetic behaviour of the TmRu2Si2.
Keywords
D. Electronic transport , D. Heat capacity , D. Thermodynamic properties , A. Metals
Journal title
Solid State Communications
Serial Year
2009
Journal title
Solid State Communications
Record number
1766194
Link To Document