• Title of article

    Changes in the electrical transport of ZnO under visible light

  • Author/Authors

    S. Al Dusari، نويسنده , , S. and Barzola-Quiquia، نويسنده , , J. and Esquinazi، نويسنده , , P. and Heluani، نويسنده , , S.P.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    5
  • From page
    22
  • To page
    26
  • Abstract
    Complex impedance spectroscopy data in the frequency range 16 Hz<f<3 MHz at room temperature were acquired on pure ZnO single crystal and thin film. The measured impedance of the ZnO samples shows large changes with time after exposure to or covering them from visible light. At fixed times Cole–Cole-diagrams indicate the presence of a single relaxation process. A simple analysis of the impedance data allows us to obtain two main relaxation times. The behavior for both, ZnO crystal and thin film, is similar but the thin film shows shorter relaxation times. The analysis indicates the existence of two different photoactive defects with activation energies between ∼0.8 eV and ∼1.1 eV.
  • Keywords
    A. Semiconductors , D. Photoconductivity
  • Journal title
    Solid State Communications
  • Serial Year
    2010
  • Journal title
    Solid State Communications
  • Record number

    1766255