• Title of article

    Ab initio studies on the electronic structure of

  • Author/Authors

    Jeong، نويسنده , , T.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    4
  • From page
    337
  • To page
    340
  • Abstract
    We investigated the electronic properties of CeIrSi 3 using density functional theory. The electronic structure of CeIrSi3 was calculated with the spin–orbit interactions and the on-site Coulomb potential for the Ce-derived 4f orbitals. The Ce 4f bands are located near the Fermi level. The fully relativistic band structure scheme shows that the spin–orbit coupling splits the 4f states into two manifolds. It was found that the total number of DOS at the Fermi level by the fully relativistic scheme corresponds to the large electronic specific heat coefficient γ b = 9.88 mJ/K 2 mol and underestimates the experiment value by a factor of 12.1.
  • Keywords
    D. Electronic structures , A. CeIrSi 3
  • Journal title
    Solid State Communications
  • Serial Year
    2010
  • Journal title
    Solid State Communications
  • Record number

    1766429