Title of article
The calculated composition of heterostructure grown on Si for direct gap emission from at
Author/Authors
Ghosh، نويسنده , , Sumitra and Basu، نويسنده , , P.K.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
844
To page
847
Abstract
We have calculated the composition of tensile strained Ge1−zCz on Ge1−x−y Six Sny heterostructures for which the indirect conduction band (L) lies above the zone centre ( Γ ) conduction band in the GeC layer in type I alignment. Linear interpolation of parameters indicates the possibility of achieving emission at 1.55 μm; however the direct gap shows a lower value when bowing parameters are considered.
Keywords
D. Light emission , A. Heterostructures , A. Group IV materials
Journal title
Solid State Communications
Serial Year
2010
Journal title
Solid State Communications
Record number
1766723
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