• Title of article

    Effects of Zr and Ti doping on the dielectric response of : A comparative first-principles study

  • Author/Authors

    Dutta، نويسنده , , Gargi and Saha، نويسنده , , Srijan Kumar and Waghmare، نويسنده , , Umesh V.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    3
  • From page
    2020
  • To page
    2022
  • Abstract
    Zr doping in ceria (CeO2) results in enhanced static dielectric response compared to pure ceria. On the other hand, Ti doping in ceria keeps its dielectric constant unchanged. We use first-principles density functional theory calculations based on pseudopotentials and a plane wave basis to determine electronic properties and dielectric response of Zr/Ti-doped and oxygen-vacancy-introduced ceria. Softening of phonon modes is responsible for the enhancement in dielectric response of Zr-doped ceria compared to that of pure ceria. The ceria–zirconia mixed oxides should have potential use as high- k materials in the semiconductor industry.
  • Keywords
    E. DFT , A. Semiconductor , A. Ceria , D. Dielectric constant
  • Journal title
    Solid State Communications
  • Serial Year
    2010
  • Journal title
    Solid State Communications
  • Record number

    1768171