Title of article
Effects of Zr and Ti doping on the dielectric response of : A comparative first-principles study
Author/Authors
Dutta، نويسنده , , Gargi and Saha، نويسنده , , Srijan Kumar and Waghmare، نويسنده , , Umesh V.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
3
From page
2020
To page
2022
Abstract
Zr doping in ceria (CeO2) results in enhanced static dielectric response compared to pure ceria. On the other hand, Ti doping in ceria keeps its dielectric constant unchanged. We use first-principles density functional theory calculations based on pseudopotentials and a plane wave basis to determine electronic properties and dielectric response of Zr/Ti-doped and oxygen-vacancy-introduced ceria. Softening of phonon modes is responsible for the enhancement in dielectric response of Zr-doped ceria compared to that of pure ceria. The ceria–zirconia mixed oxides should have potential use as high- k materials in the semiconductor industry.
Keywords
E. DFT , A. Semiconductor , A. Ceria , D. Dielectric constant
Journal title
Solid State Communications
Serial Year
2010
Journal title
Solid State Communications
Record number
1768171
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