Title of article
Molecular dynamics simulations of dislocations and nanocrystals
Author/Authors
Stewart ، نويسنده , , David Chi-Cheong and Wang، نويسنده , , Ke-Shen، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2008
Pages
4
From page
494
To page
497
Abstract
Molecular dynamics simulations are used to investigate the mechanical properties of FCC aluminium at the atomic level. As the MD method involves integrating the equations of motion to obtain trajectories for all the particles in the simulation, it is very general. Dislocation–dislocation interactions are simulated to try to find the critical distance at which opposite sign dislocations will mutually annihilate. Simulations of the interaction of a dislocation with a void show that the attraction slows down the dislocation motion, leading to void strengthening. Simulations of the deformation of an aluminium polycrystal with a grain size of 8.6 nm show that not just dislocation motion but also twinning plays a significant role. Twinning is possible in nanocrystalline aluminium because the material can withstand sufficient stress to force partial dislocations separation comparable to the grain size.
Keywords
AL , Molecular dynamics , Dislocations , Voids , Stacking fault , nanocrystal , Twinning
Journal title
Current Applied Physics
Serial Year
2008
Journal title
Current Applied Physics
Record number
1768742
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