• Title of article

    Model for the Mn acceptor in GaAs

  • Author/Authors

    Bhattacharjee، نويسنده , , A.K. and Benoit à la Guillaume، نويسنده , , C.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    5
  • From page
    17
  • To page
    21
  • Abstract
    We present a model based on the Baldereschi–Lipari effective mass theory and the sp–d exchange interaction between the valence band and the Mn d electrons (3d5). It fits in with the available experimental data and yields a relationship between the exchange-induced splitting of the 1S3/2 impurity ground state and the valence band exchange constant N0β. By using the recently reported value of the splitting, deduced from infrared spectroscopy, and fitting the known ground state binding energy, we obtain N0β≃−0.9 eV. We also study the two-hole bound state in the Hartree self-consistent approximation and account for the absence of Mn-associated bound exciton and discuss the sign anomalies in the magneto-optical data in dilute Ga1−xMnxAs.
  • Keywords
    C. Impurities in semiconductors , D. Electronic states (localized) , D. Exchange and superexchange
  • Journal title
    Solid State Communications
  • Serial Year
    1999
  • Journal title
    Solid State Communications
  • Record number

    1768791