Title of article
Model for the Mn acceptor in GaAs
Author/Authors
Bhattacharjee، نويسنده , , A.K. and Benoit à la Guillaume، نويسنده , , C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
5
From page
17
To page
21
Abstract
We present a model based on the Baldereschi–Lipari effective mass theory and the sp–d exchange interaction between the valence band and the Mn d electrons (3d5). It fits in with the available experimental data and yields a relationship between the exchange-induced splitting of the 1S3/2 impurity ground state and the valence band exchange constant N0β. By using the recently reported value of the splitting, deduced from infrared spectroscopy, and fitting the known ground state binding energy, we obtain N0β≃−0.9 eV. We also study the two-hole bound state in the Hartree self-consistent approximation and account for the absence of Mn-associated bound exciton and discuss the sign anomalies in the magneto-optical data in dilute Ga1−xMnxAs.
Keywords
C. Impurities in semiconductors , D. Electronic states (localized) , D. Exchange and superexchange
Journal title
Solid State Communications
Serial Year
1999
Journal title
Solid State Communications
Record number
1768791
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