Title of article
Electron emission characteristics of the porous polycrystalline silicon diode
Author/Authors
Kim، نويسنده , , Hoon and Park، نويسنده , , Jong-Won and Lee، نويسنده , , Joo-Won and Lee، نويسنده , , Yun-Hi and Song، نويسنده , , Yoon-Ho and Lee، نويسنده , , Jin-Ho and Cho، نويسنده , , Kyung-Ik and Jang، نويسنده , , Jin and Oh، نويسنده , , Myung-Hwan and Ju، نويسنده , , Byeong-Kwon، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2002
Pages
3
From page
233
To page
235
Abstract
It is estimated that a porous polysilicon (PPS) diode with a structure of Au/PPS/n-type Si operates as an efficient stable surface emitting cold cathode. 2.0 μm of an non-doped polysilicon layer is formed on an heavily doped n-type silicon wafer and anodized in a solution of HF (50%):ethanol=1:1 under illumination by a 500 W tungsten lamp from a distance of 20 cm. The electron emission properties of the PPS diode were investigated as a function of anodizing condition such as anodizing current density. The electron emission trajectory was investigated, and it was also demonstrated their good uniformity in the emitting area.
Keywords
vacuum microelectronics , Field emitter , Cold electron emitter , Field emission display
Journal title
Current Applied Physics
Serial Year
2002
Journal title
Current Applied Physics
Record number
1769068
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