Title of article
Electron spin resonance of erbium in gallium nitride
Author/Authors
Palczewska، نويسنده , , Wolos، A. نويسنده , , A and Kaminska، نويسنده , , M and Grzegory، نويسنده , , I. and Bockowski، نويسنده , , M and Krukowski، نويسنده , , S and Suski، نويسنده , , T and Porowski، نويسنده , , S، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
39
To page
42
Abstract
We performed electron spin resonance (ESR) measurements on Er-doped single GaN crystals synthesized from the solution of nitrogen in liquid gallium under high pressure of N2. The axial Er3+ spectrum was observed with g∥=2.861±0.003, g⊥=7.645±0.003, A∥=(110±5)×10−4cm−1, and A⊥=(290±5)×10−4 cm−1. The magnitude of an average g-factor gav=1/3(g∥+2g⊥) was nearly equal to the g(Γ7) ground state, as expected for Er3+ ions substituting for Ga in the GaN structure.
Keywords
E. Electron paramagnetic resonance , A. Semiconductors , D. Electron states (localized) , C. Impurities in semiconductors , B. Crystal growth
Journal title
Solid State Communications
Serial Year
2000
Journal title
Solid State Communications
Record number
1769125
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