Light-induced creation and annihilation of two types of dangling bonds in a-Si:H: their relative densities during illumination

We present a new model of light-induced creation of two types of dangling bonds, i.e. normal dangling bonds and hydrogen-related dangling bonds, in a-Si:H. We can account for the result that main dangling bonds are normal dangling bonds in high-quality samples, while both types of dangling bonds exist in low-quality samples containing a large amount of hydrogen.