Title of article
Optical and electrical investigations of isoelectronic In-doped GaN films
Author/Authors
Shu، نويسنده , , C.K. and Lee، نويسنده , , W.H. and Pan، نويسنده , , Y.C. and Chen، نويسنده , , C.C. and Lin، نويسنده , , H.C and Ou، نويسنده , , J and Chen، نويسنده , , W.H. and Chen، نويسنده , , W.K and Lee، نويسنده , , M.C، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
3
From page
291
To page
293
Abstract
The optical and electrical properties of isoelectronic In-doped GaN films grown by metalorganic vapor phase epitaxy (MOVPE) were investigated by X-ray, photoluminescence (PL), Hall and Raman measurements. As a result, adequate In-doping quantity causes not only a reduction of yellow luminescence and unintentional background concentration, but an enhanced mobility and decrease in the widths. The improved crystalline and optical qualities of GaN films may be attributed to the decrease in defects.
Keywords
C. Impurities in semiconductors , D. Optical properties , E. Luminescence , D. phonons
Journal title
Solid State Communications
Serial Year
2000
Journal title
Solid State Communications
Record number
1769236
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