Title of article
Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties
Author/Authors
Kim، نويسنده , , Hyun Jin and Kwon، نويسنده , , Soon-Yong and Yim، نويسنده , , Sanggiun and Na، نويسنده , , Hyunseok and Kee، نويسنده , , Bong K. Yoon، نويسنده , , Euijoon and Kim، نويسنده , , Jaehoon and Park، نويسنده , , Si-Hyun and Jeon، نويسنده , , Heonsu and Kim، نويسنده , , Sunwoon and Seo، نويسنده , , Jun Ho and Park، نويسنده , , Keunseop and Seon، نويسنده , , Moon Suk and Sone، نويسنده , , Cheolsoo and Nam، نويسنده , , Ok ، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2003
Pages
4
From page
351
To page
354
Abstract
GaN epitaxial layers were grown by metalorganic chemical vapor deposition with preheated ammonia as a group V source. The growth rates of GaN epilayers were little affected when ammonia preheater temperature was varied from room temperature to 1000 °C, however, their electrical properties as well as source materials utilization efficiency was significantly improved by using preheated ammonia. GaN epilayers grown with preheated ammonia showed excellent structural and optical properties.
Keywords
MOCVD , Ammonia preheater , Nitride semiconductor , GaN , epitaxy
Journal title
Current Applied Physics
Serial Year
2003
Journal title
Current Applied Physics
Record number
1769371
Link To Document