Simulation of the drain current and transconductance as functions of the source voltage observed in two-terminal diodes fabricated utilizing a focused ion-beam technique

Al two-terminal diodes were fabricated utilizing a focused ion-beam technique. Current–voltage (I–V) and conductance–voltage (σ–V) measurements at room temperature showed a Coulomb staircase and conductance oscillations, respectively. The I–V and the σ–V curves in the two-terminal diode were calculated by using a Monte Carlo method based on the orthodox theory and taking into account a serially connected structure with 10 Coulomb islands, and the theoretical results were in reasonable agreement with the experimental results.