Title of article
Low temperature magnetotransport phenomena in modulation-doped Si/Si1−xGex quantum well structures grown by gas-source MBE
Author/Authors
Shin، نويسنده , , D.-H and Kim، نويسنده , , S.K and Rhee، نويسنده , , J.K and Harris، نويسنده , , J.J and Maude، نويسنده , , D.K and Portal، نويسنده , , J.-C، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
6
From page
121
To page
126
Abstract
Modulation doped n-type Si/Si0.7Ge0.3 quantum wells exhibited the integer quantum Hall effect at integer filling factor ν=2,3,4,5,6,8,10,… Odd-integer filling factors showed the two-fold valley splitting, while even-integer filling factors indicated inter- and spin splitting. From an analysis of the thermally activated resistivity as a function of the magnetic field in the quantum Hall regime we deduced the energy gaps of Landau level and pre-exponential factor. The ratio of the transport relaxation time to the quantum relaxation time (∼9) indicated that the dominant scattering mechanism was long-range remote ion scattering.
Keywords
A. Quantum wells , D. Electronic states (localized) , D. Quantum hall effect , A. Disordered systems , A. Heterojunctions
Journal title
Solid State Communications
Serial Year
2000
Journal title
Solid State Communications
Record number
1769476
Link To Document