• Title of article

    Onsager approach to the universal cross-over in variable-range hopping with Coulomb interactions

  • Author/Authors

    Arkhipov، نويسنده , , V.I and Emelianova، نويسنده , , E.V and Adriaenssens، نويسنده , , G.J، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    6
  • From page
    131
  • To page
    136
  • Abstract
    A model describing low-temperature dc conductivity in a disordered hopping system is formulated. The model considers one-particle excitations as a variable range hopping with a constant density of states near the Fermi level and accounts for Coulomb interaction of charge carriers on the basis of Onsager dissociation probability. The resulting temperature dependence of the conductivity reveals a universal crossover from Mottʹs T−1/4 to Efros–Shklovskiiʹs T−1/2 laws with decreasing temperature and increasing density of localized states.
  • Keywords
    A. Disordered systems , A. Semiconductors , D. Electronic transport
  • Journal title
    Solid State Communications
  • Serial Year
    2000
  • Journal title
    Solid State Communications
  • Record number

    1769478