Title of article
Onsager approach to the universal cross-over in variable-range hopping with Coulomb interactions
Author/Authors
Arkhipov، نويسنده , , V.I and Emelianova، نويسنده , , E.V and Adriaenssens، نويسنده , , G.J، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
6
From page
131
To page
136
Abstract
A model describing low-temperature dc conductivity in a disordered hopping system is formulated. The model considers one-particle excitations as a variable range hopping with a constant density of states near the Fermi level and accounts for Coulomb interaction of charge carriers on the basis of Onsager dissociation probability. The resulting temperature dependence of the conductivity reveals a universal crossover from Mottʹs T−1/4 to Efros–Shklovskiiʹs T−1/2 laws with decreasing temperature and increasing density of localized states.
Keywords
A. Disordered systems , A. Semiconductors , D. Electronic transport
Journal title
Solid State Communications
Serial Year
2000
Journal title
Solid State Communications
Record number
1769478
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