Title of article
A boosted voltage generator for low-voltage DRAMs
Author/Authors
Cho، نويسنده , , Seong-Ik and Heo، نويسنده , , Jin-Seok and Min، نويسنده , , Kyeong-Sik and Kim، نويسنده , , Young-Hee، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2003
Pages
5
From page
501
To page
505
Abstract
This paper proposes a new two-stage two-phase VPP charge pump configured in such a manner that the body effect and the threshold voltage loss are eliminated. The newly proposed circuit is fabricated using 0.18 μm triple-well CMOS process and the measurement result shows that the VPP level tracks 3VDD when VDD is above the threshold voltage.
Keywords
two-phase , Low-voltage memories , charge pump
Journal title
Current Applied Physics
Serial Year
2003
Journal title
Current Applied Physics
Record number
1769487
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