Title of article
Electronic structure of Ga1−xCrxN investigated by photoemission spectroscopy
Author/Authors
Kim، نويسنده , , J.J. and Makino، نويسنده , , H. and Yamazaki، نويسنده , , K. and Ino، نويسنده , , A. and Namatame، نويسنده , , H. and Taniguchi، نويسنده , , M. and Hanada، نويسنده , , T. F. Cho ، نويسنده , , M.W. and Yao، نويسنده , , T.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2004
Pages
4
From page
603
To page
606
Abstract
We have obtained the Cr 3d-like energy states, which located in the band gap of GaN by means of resonant photoemission spectroscopy. In the difference spectrum between the valence band photoemission spectra of non-doped GaN and that of the Ga0.937Cr0.063N, we observed the new energy state, in band gap, consists of Cr 3d-like and N 2p-like component by strong hybridization.
Keywords
photoemission spectroscopy , Ga1?xCrxN , Ferromagnetic DMS
Journal title
Current Applied Physics
Serial Year
2004
Journal title
Current Applied Physics
Record number
1769619
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