Title of article
Neutron irradiation effect of poly-Si1−xMnx semiconductors grown by MBE
Author/Authors
Kwon، نويسنده , , Dhang and Ihm، نويسنده , , Young Eon and Lee، نويسنده , , Seoung Won and Kim، نويسنده , , Dojin and Kim، نويسنده , , Hyojin and Sohn، نويسنده , , Jae Min and Kang، نويسنده , , Young Hwan and Kim، نويسنده , , Bong Goo and Kim، نويسنده , , Chang Soo and Ryu، نويسنده , , Hyun and Oh، نويسنده , , Sang Jun، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2006
Pages
4
From page
432
To page
435
Abstract
The neutron irradiation effect of polycrystalline Si1−xMnx semiconductor thin films has been studied. The Si1−xMnx semiconductor thin films were grown on SiO2/(1 0 0)Si substrate at 400 °C by using a MBE. The as-grown specimens are irradiated by the fast neutrons of 0.82 MeV in a neutron research reactor at KAERI. After neutron irradiation, the electrical resistivities of neutron-irradiated specimens increase with the irradiation amount, while the saturation magnetizations decrease. Hall analysis reveals that the mobility of neutron-irradiated specimen decreases remarkably. The XRD and TEM analyses show that the phase transformation is not induced by the neutron irradiation.
Keywords
MNSI , magnetic semiconductor , Neutron irradiation
Journal title
Current Applied Physics
Serial Year
2006
Journal title
Current Applied Physics
Record number
1770083
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