High-efficiency electronic accommodation of energy of heterogeneous recombination of hydrogen atoms on the surface of the monocrystal ZnS

It has been found, that the rate of accommodation of energy of chemical reaction of the hydrogen atomʹs recombination via electronic channel on the surface of ZnS monocrystal increases by 5 orders of magnitude at the surface illumination by UV light. The effect is connected with the electronic accommodation of energy of the vibrationally excited molecule HV2, formed during the reaction. It is attributed to the electrons of the fine traps and to the high-speed diffusion along the surface on the diffusion distance of d⩾100 Å.