Title of article
Low-lying stationary states of Si3H and its anion
Author/Authors
Kalcher، نويسنده , , Josef and Sax، نويسنده , , Alexander F، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
8
From page
165
To page
172
Abstract
The ground states of Si3H and Si3H− have been found as 2A1 (C2v) and 1A1 (C2v), respectively, and both correspond to planar cyclic hydrogen-bridged geometries. The adiabatic electron affinity is calculated as 256 kJ/mol at the CCSD-(T) level of theory. The in-plane fluxionality of the neutral radical is much more pronounced than that of the negative ion. Besides these two minima, various stationary points (minima as well as transition states) for the neutral as well as the negative ion have been located. Several triplet negative ion states are found to be adiabatically stable.
Journal title
Chemical Physics Letters
Serial Year
1996
Journal title
Chemical Physics Letters
Record number
1777974
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