• Title of article

    Adsorption and decomposition pathways for ICN on Si(1 0 0)-(2×1)

  • Author/Authors

    Kadossov، نويسنده , , Evgueni B. and Rajasekar، نويسنده , , P. and Materer، نويسنده , , Nicholas F.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    7
  • From page
    548
  • To page
    554
  • Abstract
    The adsorption and surface reactions of ICN on the Si(1 0 0)-(2×1) surface are studied using ab initio quantum calculations on model dimer clusters. ICN can physisorb via a dative bond through the N atom. This species can further react to form either a dissociated state through I–CN bond cleavage or a stable side-on intermediate by reacting across the dimer bond. There are two important differences between the ICN adsorption process and that of HCN. Unlike HNC, the INC dative bonded structure is not stable. Next, there is no transition state between the side-on adsorbed ICN and INC species.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    2003
  • Journal title
    Chemical Physics Letters
  • Record number

    1783311