Title of article
Enhanced-Raman scattering from silicon nanoparticle substrates
Author/Authors
Liu، نويسنده , , F.M. and Ren، نويسنده , , B. and Wu، نويسنده , , J.H. and Yan، نويسنده , , J.W. and Xue، نويسنده , , X.F. and Mao، نويسنده , , B.W. and Tian، نويسنده , , Z.Q.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
6
From page
502
To page
507
Abstract
Raman enhancement effect of the electrochemically roughened silicon substrate was studied with the excitation lines of 632.8 and 514.5 nm. Two kinds of Raman enhancement effects contributing to the overall Raman signal on the roughened silicon surfaces were found: the electromagnetic cavity resonance effect occurring on the particles at the submicron scale, and the resonant Raman effect occurring on the particles at the nanometer scale. The originally extremely weak fourth-order multiphonon band has been detected easily from the silicon nano-/micro-structures assisted by these enhancements.
Journal title
Chemical Physics Letters
Serial Year
2003
Journal title
Chemical Physics Letters
Record number
1784616
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