Synthesis of beta gallium oxide nano-ribbons from gallium arsenide by plasma immersion ion implantation and rapid thermal annealing

We report the synthesis of β-phase Ga2O3 nano-ribbons by plasma immersion ion implantation (PIII) and rapid thermal annealing (RTA). Un-doped GaAs substrate was treated with PIII of nitrogen. RTA at 950 °C for 2 min produced clusters of single crystalline β-Ga2O3 nano-ribbons. These nano-ribbons have thickness of around 30 nm and widths 60 nm to 2 μm. The nano-ribbons start off directly from Ga2O3 grains on the surface and they emit blue light. Nano-wire growth usually involves a vapour–liquid–solid process in which metallic particles act as a condensation catalyst. However, we believe that the present case is likely to involve a vapour-solid mechanism.