Title of article
Interface gap states of 8-hydroxyquinoline aluminum induced by cesium metal
Author/Authors
Fung، نويسنده , , M.K and Lai، نويسنده , , S.L. and Tong، نويسنده , , S.W and Bao، نويسنده , , S.N and Lee، نويسنده , , C.S. and Lee، نويسنده , , S.T، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
4
From page
40
To page
43
Abstract
Ultra-violet photoemission spectroscopy (UPS) showed no Cs-induced gap states at the interface when tris-(8-hydroxyquinoline) aluminum (Alq3) was deposited on sub-monolayer Cs metals coated on Ag substrate. When Cs coating approached one monolayer, UPS detected a new state in the gap at 1.7 eV above the HOMO of Alq3, similar to the case of direct Cs deposition on Alq3. The observation is consistent with a strong and localized interaction between Cs and Ag. At low Cs coverage, all Cs interacted and were tied up with the Ag, leaving no free Cs to interact with Alq3, whereas at higher coverage some free Cs interacted with Alq3, giving rise to the Cs-induced gap states.
Journal title
Chemical Physics Letters
Serial Year
2004
Journal title
Chemical Physics Letters
Record number
1784892
Link To Document