Temperature coefficient of the space-charge scattering mobility dependent on the Ge doping concentration in In0.5Ga0.5P epilayers grown on GaAs (100) substrates

Temperature-dependent mobilities of Ge-doped In0.5Ga0.5P epilayers grown on (100) semi-insulating GaAs substrates by using liquid-phase epitaxy have been investigated in the temperature range between 77 and 300 K. The space-charge scattering mobility for the n-type In0.5Ga0.5P epilayer has a temperature dependence of T−0.25 to T−1.4, and that for the p-type In0.5Ga0.5P epilayer has a temperature dependence of T−0.5 to T−0.9. This result indicates that the temperature coefficient of the space-charge scattering mobility is dramatically dependent on the Ge doping concentration in the In0.5Ga0.5P epilayers.