Laser dressing effects in low-dimensional semiconductor systems

A study of the effects of a laser field on the energy spectra of low-dimensional GaAs–(Ga,Al)As semiconductor systems is presented by using a Kane band-structure model for the GaAs bulk semiconductor. For a laser tuned far below any resonances, the effects of the laser–semiconductor interaction correspond to a renormalization or dressing of the semiconductor energy gap and conduction/valence effective masses. This renormalized approach may be used to give an adequate indication of the laser effects on any semiconductor heterostructures for which the effective-mass approximation provides a good physical description. As an application, it is shown that dressing effects on the donor and exciton peak energies in quantum-well heterostructures may be quite considerable and readily observable.