Title of article
Electrical and mechanical properties of diluted magnetic semiconductor Zn1−xMnxS nanocrystalline films
Author/Authors
Sreekantha Reddy، نويسنده , , D. and Kang، نويسنده , , B. and Yu، نويسنده , , S.C. and Dwarakanadha Reddy، نويسنده , , Y. D. Sharma ، نويسنده , , S.K. and Gunasekhar، نويسنده , , K.R. Ranga Rao، نويسنده , , K.N. and Sreedhara Reddy، نويسنده , , P.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2009
Pages
4
From page
431
To page
434
Abstract
Nanostructured Zn1−xMnxS films (0 ⩽ x ⩽ 0.25) were deposited on glass substrates by simple resistive thermal evaporation technique. All the films were deposited at 300 K in a vacuum of 2 × 10−6 m bar. All the films temperature dependence of resistivity revealed semiconducting behaviour of the samples. Hot probe test revealed that all the samples exhibited n-type conductivity. The nanohardness of the films ranges from 4.7 to 9.9 GPa, Young’s modulus value ranging 69.7–94.2 GPa.
Keywords
Diluted magnetic semiconductors , Zn1?xMnxS nanocrystalline films , Electrical properties , mechanical properties
Journal title
Current Applied Physics
Serial Year
2009
Journal title
Current Applied Physics
Record number
1786614
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