A study on the Raman spectra of Al-doped and Ga-doped ZnO ceramics

AlxZn1−xO and GayZn1−yO ceramics were synthesized through a solid-state reaction technique. The crystal phase of the samples was identified by an X-ray diffraction experiment. For each sample, the electrical resistivity was determined. The Al 2-mol%-doped and Ga 0.5-mol%-doped ZnO ceramics had the lowest resistivity. Raman measurement was performed to study the doping effects in the ZnO ceramics including ZnO single crystal as a reference. The line-shape parameters, q1 and Γ1, at the same certain doping rate and the solubility limit of Al (2 mol%) and Ga (0.5 mol%) in ZnO ceramics, are strongly related to the each other, and that the solubility limit plays an important role. The second-order Raman peak at 1162 cm−1 of the ZnO ceramics was fitted by Fano formalism. The Fano’s fitting parameters, such as the lifetime of phonon and the degree of asymmetry degree of the second-order Raman peak changed as the amounts of dopants were varied.