• Title of article

    I–V characteristics of a vertical single Ni nanowire by voltage-applied atomic force microscopy

  • Author/Authors

    Choi، نويسنده , , D.S. and Rheem، نويسنده , , Y. and Yoo، نويسنده , , B. and Myung، نويسنده , , N.V. and Kim، نويسنده , , Y.K.، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2010
  • Pages
    4
  • From page
    1037
  • To page
    1040
  • Abstract
    We report the measurement of the electrical resistivity of a vertical single Ni nanowire. A vertical array of Ni nanowires was fabricated on a Si substrate by electrodeposition using a nanoporous alumina template. The Ni nanowires possessed a face-centered-cubic polycrystalline structure. A voltage-applied atomic force microscope was used to make a nanometer-scale point contact on top of the vertical grown single Ni nanowire. The measured resistance was 1.1 MΩ for a nanowire with length of 3 μm and diameter of 20 nm.
  • Keywords
    Single Ni nanowire , Voltage-applied atomic force microscopy , Electrical resistance
  • Journal title
    Current Applied Physics
  • Serial Year
    2010
  • Journal title
    Current Applied Physics
  • Record number

    1787213