• Title of article

    Ferroelectric relaxation of (Pb0.76Ca0.24)TiO3 thin film

  • Author/Authors

    Guo، نويسنده , , H.Y. and Xu، نويسنده , , J.B and Xie، نويسنده , , Z and Luo، نويسنده , , E.Z and Wilson، نويسنده , , I.H and Zhong، نويسنده , , W.L، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2002
  • Pages
    5
  • From page
    603
  • To page
    607
  • Abstract
    Ferroelectric relaxation of sol–gel prepared tetragonal (Pb0.76Ca0.24)TiO3 (PCT) thin film was investigated with piezoelectric response atomic force microscopy (AFM). The result was compared with the dielectric relaxation measured by LCR meter. It is found that the dielectric relaxation is much slower than ferroelectric relaxation. On the basis of a comprehensive survey of retention loss models and detailed analysis of experimental data it is proposed that the dielectric relaxation is due to domain wall depression and the ferroelectric relaxation was due to the depolarisation effect. An activation field of 668 kV/cm was obtained from model fitting and it is higher than existing data for PZT. This higher activation field contributes to the good retention property of the film.
  • Keywords
    A. Ferroelectrics , A. Thin films , D. Dielectric response
  • Journal title
    Solid State Communications
  • Serial Year
    2002
  • Journal title
    Solid State Communications
  • Record number

    1787217