Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange

P/As anion exchange is exploited to modify stacked InAs/GaAs quantum dot structures grown by molecular beam epitaxy (MBE). It is shown that the vertical alignment and size uniformity can be remarkably improved via P/As anion exchange. This, therefore, demonstrates a promising approach to tuning the quantum dot morphologies and structures, and hence, the electronic and optoelectronic properties.