• Title of article

    Strain-field domain structure in Bi2Te3 thermoelectric materials

  • Author/Authors

    Maier، نويسنده , , D.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2002
  • Pages
    4
  • From page
    565
  • To page
    568
  • Abstract
    A strain-field domain structure and a large number of precipitates have been observed in Bi2Te3 n- and p-type thermoelectric materials by transmission electron (TEM) microscopy analysis. The microstructure can be understood as an average unstrained structure plus a sinusoidal strain field. The displacement field of this strain field is generated by dislocations, mostly dipoles that are about 5 nm apart. These domains have a periodicity of 10 nm and lie parallel to the crystallographic (1,0,10) planes. The Burgers-vector of the dislocations within the domains is b=1/2[2,1,w] with w=0.16. These domains might originate from the strain field and motion of precipitates with a size of approximately 2–4 nm, which lie in (−1,0,5) crystallographic planes.
  • Keywords
    A. Semiconductors , A. Disordered systems , C. Dislocations and disclinations , C. Scanning and transmission electron microscopy
  • Journal title
    Solid State Communications
  • Serial Year
    2002
  • Journal title
    Solid State Communications
  • Record number

    1787388