Title of article
Magnetic and transport properties, and electronic structure of the layered chalcogenide AgCrSe2
Author/Authors
Gautam، نويسنده , , Ujjal K and Seshadri، نويسنده , , Ram and Vasudevan، نويسنده , , S and Maignan، نويسنده , , A، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
6
From page
607
To page
612
Abstract
We report a detailed study of the magnetic and transport properties of polycrystalline AgCrSe2, a layered magnetic chalcogenide that orders antiferromagnetically without frustration at 55 K. The magnetic ordering corresponds to in-plane ferromagnetic interactions with antiferromagnetic coupling between the planes. Transport studies suggest a semiconductor that is at the I–M transition boundary in terms of its resistivity, with variable-range hopping behavior at intermediate temperatures and Efros–Shklovskii hopping at low temperatures. At high temperatures (>340 K) the temperature coefficient of resistance turns positive as a result, we believe, of disorder in the silver sub-lattice. First principles density functional calculations of the electronic structure suggest a magnetic insulator ground state, and means to tune the system to ferromagnetic half-metal.
Keywords
A. AgCrSe2 , Magnetic semiconductors , Antiferromagnetics , Low-dimensional electronic structure
Journal title
Solid State Communications
Serial Year
2002
Journal title
Solid State Communications
Record number
1787401
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