Title of article
Control by an electric field of electron–hole separation in type-II heterostructures
Author/Authors
Vasilyev، نويسنده , , Yu.B and Solovʹev، نويسنده , , V.A and Melʹtser، نويسنده , , Ya. S. Semenov and V. P. Larionov ، نويسنده , , A.N and Baidakova، نويسنده , , M.V and Ivanov، نويسنده , , S.V and Kopʹev، نويسنده , , P.S and Mendez، نويسنده , , E.E and Lin، نويسنده , , Y، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
4
From page
323
To page
326
Abstract
We report the realization of multi-period devices in which each period consists of two-dimensional electron and hole layers whose effective distance is controlled by an external bias. The current–voltage characteristics of devices based on InAs/AlxGa1−xAsSb/Al0.1Ga0.9AsSb type-II quantum well structures show a behavior that is consistent with a predicted enhancement of the radiative recombination in this type of devices at T=77 K. We have found that increasing the number of periods and decreasing the operating temperature considerably improves the electrical performance of the devices.
Keywords
A. Nanostructures , B. Epitaxy , D. Electronic transport
Journal title
Solid State Communications
Serial Year
2002
Journal title
Solid State Communications
Record number
1787642
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