• Title of article

    Nonlocal voltage in a spin field effect transistor with finite channel width

  • Author/Authors

    Eom، نويسنده , , Jonghwa and Koo، نويسنده , , Hyun Cheol and Chang، نويسنده , , Joonyeon and Han، نويسنده , , Suk Hee، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2011
  • Pages
    4
  • From page
    276
  • To page
    279
  • Abstract
    Spin transport in the two-dimensional electron gas with strong spin–orbit interaction is examined by using a simple phenomenological simulation. The large spin–orbit interaction and the randomized electron trajectory due to the impurity scattering make the nonlocal voltage of a spin field effect transistor undetectable in the diffusive regime. However, the spin-precessional phase accumulates coherently in the ballistic regime and the nonlocal voltage is given by a function of spin–orbit interaction parameter. If the distance between injector and detector is comparable to the mean free path, a sinusoidal oscillation of nonlocal voltage is restored even for a wide channel.
  • Keywords
    Spin–orbit interaction , Spin field effect transistor , Rashba spin splitting
  • Journal title
    Current Applied Physics
  • Serial Year
    2011
  • Journal title
    Current Applied Physics
  • Record number

    1787654