SrTiO3 homoepitaxy by the pulsed laser deposition method: island, layer-by-layer, and step-flow growth

SrTiO3 homoepitaxy was investigated under various conditions using the pulsed laser deposition method. The growth mode was determined by in-situ reflection high-energy electron diffraction, and the surface of the films was characterized by ex-situ atomic force microscopy. At the laser fluence of 0.68 J/cm2, island growth was observed below 500 °C substrate temperature, while the growth mode turned into layer-by-layer growth above 500 °C. On further raising the substrate temperature, the step-flow growth mode prevailed above 800 °C. We thus demonstrated that step-flow growth in SrTiO3 homoepitaxy is possible at a temperature as low as 800 °C.