Characterization of (ZnO)1−x(AlN)x/ZnO junction for optoelectronic applications

We report the characterization of ZnO homojunction fabricated with undoped (n-ZnO) and AlN codoped ZnO (p-ZnO) films by RF magnetron sputtering. We directly doped (codoped) AlN into ZnO to obtain p-ZnO instead of conventional codoping method. The Current-Voltage characteristics of the fabricated p-n junction show a typical rectification behavior. The junction parameters such as ideality factor (11.85), barrier height (0.782 eV) and series resistance (33 kΩ) have been determined using Cheung’s method. The barrier height (0.805 eV) determined by Norde’s method is also in good agreement with Cheung’s method.