Title of article
Electrical properties of pulsed laser-deposited SrxBiyTa2O9 thin films on Bi/Sr ratios
Author/Authors
Park، نويسنده , , Jongho and Kim، نويسنده , , Chung-Sik and Choi، نويسنده , , Byung-Chun and Jeong، نويسنده , , Jung-Hyun and Moon، نويسنده , , Byung Kee and Seo، نويسنده , , Hyo-Jin and Kim، نويسنده , , Ill Won and Kim، نويسنده , , Jin-Soo، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
315
To page
318
Abstract
The dependence of the electrical properties of SrxBiyTa2O9 thin films on the (Bi/Sr ratio 1.6, 2.3, 2.8, 3.4) has been investigated. The SrxBiyTa2O9 ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrates using the pulsed laser deposition method. Saturation polarization (Pst) and coercive field (2Ec) depend on the Bi/Sr ratio. Pst increases while Ec decreases with an increase in Bi/Sr ratio. Atomic Force Microscopy images show that the grain size grows with increasing Bi/Sr ratio. It is observed that the impedance behavior in SrxBiyTa2O9 thin film, conforms to the Constant Phase Element (CPE) model. It is believed that the diffuse charges at the grain boundary build up a surface polarization because the impedance behavior close to pure capacitor with grain size increased.
Keywords
A. Thin films , D. Dielectric response
Journal title
Solid State Communications
Serial Year
2003
Journal title
Solid State Communications
Record number
1788200
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