Title of article
Beating patterns in the oscillatory magnetoresistance of an AlGaN/GaN heterostructure
Author/Authors
Qiu، نويسنده , , Z.J. and Gui، نويسنده , , Y.S. and Zheng، نويسنده , , Z.W. and Tang، نويسنده , , N. and Lu، نويسنده , , J. and Shen، نويسنده , , B. X. Dai، نويسنده , , N. and Chu، نويسنده , , J.H.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
4
From page
187
To page
190
Abstract
Magneto-transport measurements have been carried out on a modulation-doped Al0.22Ga0.78N/GaN heterostructure in a temperature range between 1.5 and 25 K with a rather high carrier density, 1.1×1013 cm−2. Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a special temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband.
Keywords
A. Heterostructure , D. Two-dimensional electron gas , D. Magnetoresistance
Journal title
Solid State Communications
Serial Year
2004
Journal title
Solid State Communications
Record number
1788548
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