Title of article
Barrier height and negative tunnel magnetoresistance
Author/Authors
Liang، نويسنده , , Xue-Fei and Yang، نويسنده , , Wei، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
459
To page
463
Abstract
Based on the free-electron approximation method proposed by Slonczewski, we substitute the finite magnetic zone by a semi-infinite magnet. On this basis, the relationship between the tunnel magnetoresistance (TMR) and the barrier height of magnetic tunnel junction (MTJ) is studied. We find the TMR at small bias is always positive for various barrier heights when the MTJ has a symmetric configuration and the negative TMR can be observed when MTJ is with lower barrier height in the asymmetric condition.
Keywords
A. Magnetic films and multilayers , D. Tunneling
Journal title
Solid State Communications
Serial Year
2004
Journal title
Solid State Communications
Record number
1788638
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