• Title of article

    Edge current switch of two-dimensional electron gas using carrier density control

  • Author/Authors

    Seo، نويسنده , , Yongho and Eom، نويسنده , , Byeongho and Yu، نويسنده , , Insuk and Park، نويسنده , , Kyoungwan and Lee، نويسنده , , Seongjae، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    5
  • From page
    391
  • To page
    395
  • Abstract
    We have investigated the effects of electron density discontinuity on the transports of edge currents of two-dimensional electron gas (2DEG). The electric field applied to a gate, which covers the 2DEG partially, gives rise to change in the carrier density and results in a density gradient, which deforms the edge currents. The transverse and longitudinal resistances were measured as functions of gate voltage VG in the quantum Hall regime. The deviations of the longitudinal resistances from the normal quantum Hall resistances are attributed to the reflections of the edge currents under the influence of the abrupt density discontinuity. A switching behavior of the transverse resistance by controlling the gate voltage was observed when VG=−2.2 and −2.0 V for magnetic field H=5 and 7.2 T, respectively.
  • Keywords
    A. GaAs/AlGaAs , D. Two-dimensional electron gas , D. Quantum hall effect , D. Edge state
  • Journal title
    Solid State Communications
  • Serial Year
    2004
  • Journal title
    Solid State Communications
  • Record number

    1788819