Title of article
Edge current switch of two-dimensional electron gas using carrier density control
Author/Authors
Seo، نويسنده , , Yongho and Eom، نويسنده , , Byeongho and Yu، نويسنده , , Insuk and Park، نويسنده , , Kyoungwan and Lee، نويسنده , , Seongjae، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
391
To page
395
Abstract
We have investigated the effects of electron density discontinuity on the transports of edge currents of two-dimensional electron gas (2DEG). The electric field applied to a gate, which covers the 2DEG partially, gives rise to change in the carrier density and results in a density gradient, which deforms the edge currents. The transverse and longitudinal resistances were measured as functions of gate voltage VG in the quantum Hall regime. The deviations of the longitudinal resistances from the normal quantum Hall resistances are attributed to the reflections of the edge currents under the influence of the abrupt density discontinuity. A switching behavior of the transverse resistance by controlling the gate voltage was observed when VG=−2.2 and −2.0 V for magnetic field H=5 and 7.2 T, respectively.
Keywords
A. GaAs/AlGaAs , D. Two-dimensional electron gas , D. Quantum hall effect , D. Edge state
Journal title
Solid State Communications
Serial Year
2004
Journal title
Solid State Communications
Record number
1788819
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