Effects of interface between SnO2 thin film and Si substrate on growth time

SnO2 thin film was grown on Si substrate using the low pressure chemical vapor deposition (LPCVD) method. The SnO2 thin film was grown in the direction of (110) as deposition time increased. The atomic ratio of O decreased by 62.4, 57.6, and 45.6%, and the thickness of the thin film increased to 0.2, 0.3, and 0.7 ㎛ as the deposition time increased to 10, 20, and 30 min, respectively. The interface of the thin film was examined using high-resolution transmission electron microscope (HRTEM) and energy dispersive spectroscopy (EDS) analysis. The SiO2 layer was observed at between the SnO2 thin film and the Si substrate. This layer decreased in thickness as the deposition time increased, which indicates that the deposition time affected the interface of the thin film.