• Title of article

    Electrical bistability of tris-(8-hydroxyquinoline) aluminum (Alq3)/ZnSe organic-inorganic bistable device

  • Author/Authors

    Onlaor، نويسنده , , K. and Tunhoo، نويسنده , , B. and Thiwawong، نويسنده , , T. and Nukeaw، نويسنده , , J.، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2012
  • Pages
    6
  • From page
    331
  • To page
    336
  • Abstract
    We present that the electrical bistability in organic-inorganic bistable devices based on tris-(8-hydroxyquinoline) aluminum (Alq3) and zinc selenide (ZnSe) with the tri-layer structure of Alq3/aluminum (Al)/ZnSe. The current–voltage characteristics of the bistable device exhibit two electrical states as low (OFF state) and high (ON state) conductivity with ON/OFF ratio about four orders of magnitude. The conduction mechanisms in both ON and OFF states were analyzed by theoretical model. In the OFF state, the conduction mechanisms can be explained by thermionic emission model, which the ON state can be described by ohmic conduction model. The retention times of both states are more than 8000 s, and the device can reproduce continuous write-read-erase-read switching cycles. Moreover, for the organic-inorganic bistable device was kept at one year in ambient condition without encapsulation. The device still exhibited the electrical bistable behavior. Consequently, the ZnSe layer may be led to improve the lifetime property of the bistable device which acted as a self-encapsulating layer.
  • Keywords
    Memory characteristics , memory device , Organic-inorganic nanodevice , Conduction mechanism , Bistable device
  • Journal title
    Current Applied Physics
  • Serial Year
    2012
  • Journal title
    Current Applied Physics
  • Record number

    1788883